sot - 89 - 3l 1. base 2. collector 3. emitter transistor(pnp) features ? excellent d c c urrent g ain ? low collector - emitter saturation voltage ? complement the 2sd2150 maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base br eakdown voltage v (br) cbo i c = - 5 0 a ,i e =0 - 2 0 v c ollector - emitter breakdown voltage v (br) ceo i c = - 1 ma , i b =0 - 20 v emitter - base breakdown voltage v (br) e b o i e = - 5 0 a ,i c =0 - 6 v collector cut - off current i cbo v cb = - 20 v,i e =0 - 0. 1 a emitter cut - off curren t i ebo v e b = - 5 v,i c =0 - 0. 1 a dc current gain h fe v ce = - 2 v , i c = - 0. 1 a 120 390 collector - emitter saturation voltage v ce(sat) i c = - 2 a ,i b = - 0 .1 a - 0. 5 v collector output capacitance c ob v cb = - 1 0v,i e =0, f= 1 mhz 35 pf transition frequency f t v ce = - 2 v,i c = - 0.5 a , f= 100 mhz 240 mhz classification of h fe rank q r range 120 C 270 180 C 390 marking aeq aer symbol parameter value unit v cbo collector - b ase v oltage - 20 v v ceo collector - e mitter v oltage - 20 v v ebo emitter - b ase v oltage - 6 v i c collector c urrent - 3 a p c collector p ower d issipation 500 m w r ja thermal resistance from junction to ambient 250 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sb1 424
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